Infineon

Infineon's range of discrete devices is extensive, with the main types including:

- Silicon Carbide MOSFET Discrete Devices: CoolSiC™ MOSFETs, which feature low device capacitance, temperature-independent switching losses, intrinsic diode with low reverse recovery charge, and threshold-free on-state characteristics, enabling high power density, high efficiency, and high reliability. They are suitable for hard-switching and resonant-switching topologies such as power factor correction (PFC) circuits, bidirectional topologies, and DC-DC converters or DC-AC inverters, and are widely used in artificial intelligence server power units, solar and energy storage systems, industrial applications, and automotive applications .

- IGBT Discrete Devices: The IGBT7 series, including models T7, S7, and H7, where T7 and S7 are designed for applications requiring short-circuit current capability, such as motor drives; H7 uses micro-trench gate technology, significantly reducing conduction and switching losses, suitable for applications pursuing high efficiency and low loss, with some products adopting new packaging that increases creepage distance and electrical clearance, enhancing reliability, suitable for outdoor scenarios such as photovoltaic, energy storage, and charging piles .

- Reverse Conducting IGBTs: Such as the 650V RC-H6 reverse conducting IGBT, suitable for applications like half-bridge induction cooking .

- Diodes: Silicon Carbide Schottky Diodes, which have the advantages of short reverse recovery time and low forward voltage drop, when used in conjunction with devices like IGBTs, can significantly reduce switching losses and improve system efficiency, commonly used in high-frequency, high-voltage, high-efficiency power conversion circuits, such as DC-DC converters, PFC circuits, etc. .

- General Silicon Diodes: Including fast recovery diodes, rectifier diodes, etc., they can meet the needs of different voltage and current levels and application scenarios, playing roles in rectification, clipping, and clamping in power circuits and signal processing circuits .

- Transistors: Bipolar Junction Transistors (BJT), such as models BCV49H, BCW60DE, which have current amplification effects and can be used in audio amplification, switching circuits, signal processing, and various other circuits .

- Field-Effect Transistors (FET): Including MOSFET and JFET, among which MOSFET has N-channel and P-channel types, such as models IRF1010NPBF, IRF9530N, with the advantages of high input impedance, low noise, and low power consumption, widely used in power management, motor drive, signal amplification, and other circuits .

- Thyristors: General thyristors can be used in circuits for controlled rectification, inversion, and voltage regulation, realizing the control and transformation of AC power, commonly used in power electronic equipment, industrial control, and other fields .

- Gate-Turn-Off Thyristors (GTO): With the ability to turn off, they can achieve device conduction and turn-off by controlling the gate signal, mainly used in high-voltage, high-current DC transmission, variable frequency speed control, and other fields .

Other Discrete Devices:

- Resistors: Including general resistors, precision resistors, power resistors, etc., used to limit current, divide voltage, generate heat, etc., widely used in various electronic circuits.

- Capacitors: With various types such as ceramic capacitors, electrolytic capacitors, tantalum capacitors, used for filtering, coupling, bypassing, energy storage, etc., different types of capacitors are suitable for different frequency ranges and voltage levels.

- Inductors: Mainly used for filtering, energy storage, voltage transformation, such as power inductors used in DC-DC converters to store and release energy, chokes used to prevent high-frequency current flow, etc.